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A sinusoidal carrier voltage is amplitude modulated. The resultant amplitude modulated wave has maximum and minimum amplitude of \( 120 \, \text{V} \) and \( 80 \, \text{V} \) respectively. The amplitude of each sideband is:

Which one of the following statement is not correct in the case of light emitting diodes?
A. It is heavily doped p-n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below:

The logic operations performed by the given digital circuit is equivalent to:

If the height of transmitting and receiving antennas are \( 80 \, \text{m} \) each, the maximum line of sight distance will be: Given: Earth’s radius \( = 6.4 \times 10^{6} \, \text{m} \).

A Zener diode of power ration \( 1.6 \, \text{W} \) is to be used as voltage regulator. If the Zener diode has a breakdown of \( 8 \, \text{V} \) and it has to regulate voltage fluctuating between \( 3 \, \text{V} \) and \( 10 \, \text{V} \). The value of resistance \( R_8 \) for safe operation of diode will be:

If each diode has a forward bias resistance of \( 25 \, \Omega \) in the below circuit,

which of the following options is correct?

Given below are two statements:
Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II: In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R: For a \( p - n \) junction diode, at applied voltage \( V \) the current in the forward bias is more than the current in the reverse bias for \( |V_z| \ge \pm V \ge |V_0| \) where \( V_0 \) is the threshold voltage and \( V_z \) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below.

Name the logic gate equivalent to the diagram attached:

Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R).
Assertion (A): Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason (R): The current in the forward bias is more than the current in the reverse bias for a p – n junction diode.
In the light of the above statement, choose the correct answer from the options given below:

The effect of increase in temperature on the number of electrons in conduction band \( (n_e) \) and resistance of a semiconductor will be is:

Choose the correct statement about Zener diode:

The resistivity \( (\rho) \) of semiconductor varies with temperature. Which of the following curve represents the correct behaviour:

Match List I with List II:

[Choose the correct answer]

From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is \( 10^{x} \), for \( R_{B} = 10 \, \text{k}\Omega \), and \( R_{C} = 1 \, \text{k}\Omega \). Then value of \( x \) is _____.

In an \( n\!\!-\!p\!\!-\!n \) common emitter \( (CE) \) transistor, the collector current changes from \( 5 \,\text{mA} \) to \( 16 \,\text{mA} \) for the change in base current from \( 100 \,\mu\text{A} \) and \( 200 \,\mu\text{A} \) respectively. The current gain of transistor is _______.

Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi-conductor such that P-type has excess holes and N-type has excess electrons.
Statement II: When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below:

For a given transistor amplifier circuit in CE configuration \( V_{CC} = 1 \, \text{V} \), \( R_{C} = 1 \, \text{k}\Omega \), \( R_{b} = 100 \, \text{k}\Omega \) and \( \beta = 100 \). Value of base current \( I_{b} \) is:

The logic gate equivalent to the given circuit diagram is:

In the given circuit, the current \( (I) \) through the battery will be

For the logic circuit shown, the output waveform at \( Y \) is:

For the given logic gates combination, the correct truth table will be:

The logic performed by the circuit shown in figure is equivalent to:

For the following circuit and given inputs \(A\) and \(B\), choose the correct option for output ‘\(Y\)’.

The output waveform of the given logical circuit for the following inputs \( A \) and \( B \) as shown below, is:

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Diffusion current in a \( p\text{-}n \) junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a \( p\text{-}n \) junction is from the \( n \)-side to the \( p \)-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below

The output \( Y \) for the inputs \( A \) and \( B \) of circuit is given by:

Truth table of the shown circuit is:

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JEE Main 2023 10th April Evening Shift

If each diode has a forward bias resistance of \( 25 \, \Omega \) in the below circuit,

which of the following options is correct?