In a semiconductor p-n diode, the doping concentrations on p-side and n-side are \( 10^{15} \) \( \text{atoms}/\text{cm}^3 \) and \( 10^{18} \) \( \text{atoms}/\text{cm}^3 \), respectively. Which one of the following statements is true?
Widths of depletion region on either side of the interface are equal
The depletion region width is more on p-side compared to that in n-side
The depletion region width is more n-side compared to that in p-side
No depletion region forms because of unequal doping concentrations on p and n-sides
