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The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :

A \( 8\,\text{V} \) zener diode along with a series resistance \( R \) is connected across a \( 20\,\text{V} \) supply (as shown in the figure). If the maximum Zener current is \( 25\,\text{mA} \), then the minimum value of \( R \) will be ______ \( \Omega \).

A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by \( 100 \, \mu \text{A} \), it brings a change of \( 10 \, \text{mA} \) in collector current. If the load resistance is \( 2 \, \text{k}\Omega \) and input resistance is \( 1 \, \text{k}\Omega \), the value of power gain is \( x \times 10^{4} \). The value of \( x \) is __________.

In the given circuit the input voltage \( V_{in} \) is shown in figure. The cut-in voltage of p–n junction diode (\( D_1 \) or \( D_2 \)) is \( 0.6 \, \text{V} \). Which of the following output voltage (\( V_0 \)) waveform across the diode is correct?

For a transistor to act as a switch, it must be operated in

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of \( 2 \, \text{V} \) and \( 4 \, \text{V} \) respectively, is:

For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode:

A zener of breakdown voltage \( V_Z = 8 \, \text{V} \) and maximum zener current, \( I_{ZM} = 10 \, \text{mA} \) is subjected to an input voltage \( V_i = 10 \, \text{V} \) with series resistance \( R = 100 \, \Omega \). In the given circuit \( R_L \) represents the variable load resistance. The ratio of maximum and minimum value of \( R_L \) is __________.

In the circuit shown below, maximum zener diode current will be ________ \( \text{mA} \).

In the following circuit, the correct relation between output (\( Y \)) and inputs \( A \) and \( B \) will be:

Identify the solar cell characteristics from the following options:

Given below are two statements: One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: \( n\text{-}p\text{-}n \) transistor permits more current than a \( p\text{-}n\text{-}p \) transistor.
Reason R: Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below:

If the potential barrier across a p-n junction is \( 0.6 \, \text{V} \). Then the electric field intensity, in the depletion region having the width of \( 6 \times 10^{-6} \, \text{m} \), will be __________ \( \times 10^{5} \, \text{N/C} \)

A logic gate circuit has two inputs \( A \) and \( B \) and output \( Y \). The voltage waveforms of \( A \), \( B \) and \( Y \) are shown below:

The logic gate circuit is:

The energy band gap of semiconducting material to produce violet (wavelength \( = 4000\text{ }\mathring{\text{A}} \)) LED is ________ \( \text{eV} \). (Round off to the nearest integer).

For a constant collector-emitter voltage of \( 8 \, \text{V} \), the collector current of a transistor reached to the value of \( 6 \, \text{mA} \) from \( 4 \, \text{mA} \), whereas base current changed from \( 20 \, \mu\text{A} \) to \( 25 \, \mu\text{A} \) value. If transistor is in active state, small signal current gain (current amplification factor) will be:

The cut-off voltage of the diodes (shown in figure) in forward bias is \( 0.6 \,\text{V} \). The current through the resister of \( 40 \,\Omega \) is __________ \( \text{mA} \).

In the given circuit, the value of current \( I_{L} \) will be ________ \( \text{mA} \). (When \( R_{L} = 1 \, \text{k}\Omega \))

Identify the correct Logic Gate for the following output \( (Y) \) of two inputs \( A \) and \( B \).

As per the given circuit, the value of current through the battery will be __________ \( \mathrm{A} \).

The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of \( 2 \, \text{k}\Omega \) is connected in the collector branch of the circuit used. The input resistance of the transistor is \( 0.50 \, \text{k}\Omega \). The voltage gain of the transistor is __________.

An n.p.n. transistor with current gain \( \beta = 100 \) in common emitter configuration is shown in figure. The output voltage of the amplifier will be:

In the circuit, the logical value of \( A = 1 \) or \( B = 1 \) when potential at \( A \) or \( B \) is \( 5\,\text{V} \) and the logical value of \( A = 0 \) or \( B = 0 \) when potential at \( A \) or \( V \) is \( 0\,\text{V} \).

The truth table of the given circuit will be :

Identify the logic operation performed by the given circuit:

A potential barrier of \( 0.4 \, \text{V} \) exists across a \( p-\!n \) junction. An electron enters the junction from the \( n \) - side with a speed of \( 6.0 \times 10^{5} \, \text{m s}^{-1} \). The speed with which electron enters the \( p \) side will be \( \frac{x}{3} \times 10^{5} \, \text{m s}^{-1} \) the value of \( x \) is ______.
(Given mass of electron \( = 9 \times 10^{-31} \, \text{kg} \), charge on electron \( = 1.6 \times 10^{-19} \, \text{C} \).)

A transistor is used in common-emitter mode in an amplifier circuit. When a signal of \( 10 \, \text{mV} \) is added to the base-emitter voltage, the base current changes by \( 10 \, \mu\text{A} \) and the collector current changes by \( 1.5 \, \text{mA} \). The load resistance is \( 5 \, \text{k}\Omega \). The voltage gain of the transistor will be ________.

In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure.

If the input resistance is \( 200 \, \Omega \) and output resistance is \( 60 \, \Omega \), the voltage gain in this experiment will be _______.

Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between \( A \) and \( B \) is __________ \( \Omega \).

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JEE Main 2022 28th July Morning Shift

Identify the solar cell characteristics from the following options: